| 发明名称 |
Semiconductor device having plural standard cells |
| 摘要 |
Disclosed herein is a device that includes: a plurality of first standard cells arranged on a semiconductor substrate in a first direction, each of the first standard cells including at least one field-effect transistor; and a first power supply wiring extending in the first direction along one end of the first standard cells in a second direction. The field-effect transistor including a gate electrode formed on a gate wiring layer. The first power supply wiring being formed on the gate wiring layer. |
| 申请公布号 |
US9165923(B2) |
申请公布日期 |
2015.10.20 |
| 申请号 |
US201313786017 |
申请日期 |
2013.03.05 |
| 申请人 |
PS4 Luxco S.a.r.l. |
发明人 |
Sugimoto Satoru;Shimizu Takanari |
| 分类号 |
H01L27/088;H01L27/02;H01L27/118 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a plurality of first standard cells arranged on a semiconductor substrate in a first direction, each of the first standard cells including at least one field-effect transistor; and a first power supply wiring extending in the first direction along one end of the first standard cells, the field-effect transistor including a gate electrode formed on a gate wiring layer, the first power supply wiring being formed on the gate wiring layer, the gate electrode and the first power supply wiring being formed in the same layer. |
| 地址 |
Luxembourg LU |
