Lateral transistor component and method for producing same

摘要

A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in a region near the body zone and a second thickness in a region near the drift zone.

主权项

1. A transistor component comprising:
an active transistor region arranged in a semiconductor body; an insulation region disposed adjacent the active transistor region in the semiconductor body; a source zone, a drain zone, a body zone and a drift zone in the active transistor region, wherein the source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone, and the drift zone is arranged between the body zone and the drain zone; a gate electrode arranged above the active transistor region and insulated from the active transistor region by a dielectric layer, the dielectric layer having a first thickness in a first region near the body zone and having a second thickness in a second region near the drift zone, the second thickness being greater than the first thickness, wherein the dielectric layer has a transition region in which a thickness of the dielectric layer changes from the first thickness to the second thickness, and wherein the transition region overlaps with the drift zone; and a drain electrode making contact with the drain zone through a first contact opening in the gate electrode.