GaN transistor with improved bonding pad structure and method of fabricating the same

摘要

The present invention relates to a GaN transistor, and a method of fabricating the same, in which a structure of a bonding pad is improved by forming an ohmic metal layer at edges of the bonding pad of a source, a drain, and a gate so as to be appropriate to wire-bonding or a back-side via-hole forming process. Accordingly, adhesive force between a metal layer of the bonding pad and a GaN substrate is enhanced by forming the ohmic metal at the edges of the bonding pad during manufacturing of the GaN transistor, thereby minimizing a separation phenomenon of a pad layer during the wire-bonding or back-side via-hole forming process, and improving reliability of a device.

主权项

1. A GaN transistor including a bonding pad structure, comprising:
a GaN substrate, a source, a drain and a gate formed on the GaN substrate; bonding pads of the source, the drain and the gate formed on the GaN substrate; an ohmic metal layer formed only at edges of a surface of each of the bonding pads of the source, the drain, and the gate; a first metal layer formed on the surface of each of the bonding pads on which the ohmic metal layer is formed and on the ohmic metal layer; and a layer comprising gold formed on the first metal layer.