发明名称 Crystal growth device
摘要 A crystal growth device includes a crucible and a heater setting. The crucible has a bottom and a top opening. The heater setting surrounds the crucible and is movable relative to the crucible along a top-bottom direction of the crucible and between first and second positions. The heater setting includes a first temperature heating zone and a second temperature heating zone higher in temperature than the first temperature heating zone. The heater setting is in the first position when the crucible is in the second temperature heating zone and in the second position when the crucible is in the first temperature heating zone.
申请公布号 US9163326(B2) 申请公布日期 2015.10.20
申请号 US201213479497 申请日期 2012.05.24
申请人 Sino-American Silicon Products Inc. 发明人 Lan Chung-Wen;Hsu Bruce;Yu Wen-Huai;Lan Wen-Chieh;Yang Yu-Min;Pai Kai-Yuan;Hsu Wen-Ching
分类号 C30B11/00;C30B21/02 主分类号 C30B11/00
代理机构 Osha Liang LLP 代理人 Osha Liang LLP
主权项 1. A crystal growth device comprising: a crucible having a bottom and a top opening; and a heater setting surrounding said crucible and movable relative to said crucible along a top-bottom direction of said crucible and between first and second positions, said heater setting including a first temperature heating zone and a second temperature heating zone higher in temperature than said first temperature heating zone, said heater setting being in said first position when said crucible is in said second temperature heating zone and in said second position when said crucible is in said first temperature heating zone, wherein said heater setting further includes a heating member surrounding said crucible to heat said crucible, and a heat insulation member completely disposed inside said heating member and around said crucible and covering an inner surface of a lower part of said heating member, said heating member being higher than said heat insulation member and having an upper part that is uncovered by said heat insulation member, said heat insulation member being unmovable relative to said lower part of said heating member, said heat insulation member is in direct contact with said inner surface of said lower part of said heating member, said upper part of said heating member surrounding said second temperature heating zone, said lower part of said heating member and said heat insulation member surrounding said first temperature heating zone.
地址 Hsinchu TW