具有多重启始电压的半导体装置及其制造方法;SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGE AND METHOD OF FABRICATING THE SAME

摘要

一实施例提供之晶片包括具有第一临界值的第一垂直装置，与具有第二临界值的第二垂直装置。第一垂直装置包括第一源极；第一通道位于第一源极上；第一汲极位于第一通道上；第一闸极介电层与第一通道相邻；第一导电层与第一闸极介电层相邻；以及第一闸极与第一导电层相邻。第二垂直装置包括：第二源极；第二通道位于第二源极上；第二汲极位于第二通道上；第二闸极介电层与第二通道相邻；第二导电层与第二闸极介电层相邻；以及第二闸极与第二导电层相邻。; a first channel over the first source; a first drain over the first channel; a first conductive layer adjacent to the first channel; and a first gate adjacent to the first conductive layer. The second vertical device includes a second source; a second channel over the second source; a second drain over the second channel; a second conductive layer adjacent to the second channel; and a second gate adjacent to the second conductive layer.