半导体结构及其制造方法;SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
摘要
本揭露提供一种半导体结构之制造方法。此方法包括:提供一基底,其包括位于基底上的复数鳍结构;涂覆一第一溶液于基底上以形成一第一介电层;以及涂覆一第二溶液于第一介电层上以形成一第二介电层来覆盖鳍结构。第一溶液具有一第一黏度。第二溶液具有一第二黏度。在一些实施例中,第二黏度大于第一黏度。; coating a first solution on the substrate to form a first dielectric layer; and coating a second solution on the first dielectric layer to form a second dielectric layer to cover the fin structures. The first solution has a first viscosity. The second solution has a second viscosity. In some embodiment, the second viscosity is greater than the first viscosity.