| 摘要 |
一种制造异质接面场效电晶体的方法，该异质接面场效电晶体包含由数个叠置层所构成的半导体构造，该方法包含：-在基材层(1)上设置缓冲层(2)、通道层(3)和阻障层(4)，该等层系由具有Ga(1-p-q)Al(p)In(q)N型的六角形结晶构造的材料制成；-在沉积于该阻障层上的介电质遮蔽层(5)中形成开口；-利用高温磊晶来在由被形成在该遮蔽层中的开口所界定的成长区上，成长半导体材料(6、6’)，该半导体材料具有六角形结晶构造，即Ga(1-x’-y’)Al(x’)In(y’)N，且掺杂锗；及-在利用磊晶所沉积的该材料上沉积源极或汲极接触电极(15、16)，且在该成长区外部的位置沉积闸极(13)。; - forming an opening in a dielectric masking layer (5) deposited on the barrier layer; - growing by high-temperature epitaxy a semiconductor material (6, 6’) having a hexagonal crystal structure, namely Ga(1-x’-y’)Al(x’)In(y’)N, doped with germanium, on a growth zone defined by the opening formed in the masking layer; and - depositing a source or drain contact electrode (15, 16) on the material thus deposited by epitaxy, and a gate electrode (13) in a location outside of the growth zone. |
