发明名称 |
电子元件及其制作方法;ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
一种电子元件的制作方法,包括:提供一基板;在基板上形成一源极与一汲极;在基板上形成一半导体层;在半导体层上形成一第一光敏材料层;利用一第一曝光显影制程将第一光敏材料层的一第一部分移除,而留下第一光敏材料层的一第二部分以作为一第一闸绝缘层;将半导体层图案化,以形成一位于第一闸绝缘层下的通道层;在基板上形成一第二光敏材料层;利用一第二曝光显影制程将第二光敏材料层的一第三部分移除,以暴露出至少部分第一闸绝缘层;以及在第一闸绝缘层上形成一第一闸极。一种电子元件亦被提出。; forming a source and a drain on the substrate; forming a semiconductor layer on the substrate; forming a first light sensitive material layer on the semiconductor layer; removing a first portion of the first light sensitive material layer by a first exposure and develop process and maintaining a second portion of the first light sensitive material layer to serve as a first gate insulation layer; patterning the semiconductor layer to form a channel layer below the first gate insulation layer; forming a second light sensitive material layer on the substrate; removing a third portion of the second light sensitive material layer by a second exposure and develop process to expose at least a part of the first gate insulation layer; and forming a first gate on the first gate insulation layer. An electronic device is also provided. |
申请公布号 |
TW201539756 |
申请公布日期 |
2015.10.16 |
申请号 |
TW103112718 |
申请日期 |
2014.04.07 |
申请人 |
纬创资通股份有限公司 WISTRON CORPORATION |
发明人 |
彭玉容 PENG, YU JUNG;谢芯瑀 HSIEH, HSIN YU;王怡凯 WANG, YI KAI |
分类号 |
H01L29/78(2006.01);H01L21/28(2006.01) |
主分类号 |
H01L29/78(2006.01) |
代理机构 |
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代理人 |
叶璟宗詹东颖刘亚君 |
主权项 |
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地址 |
新北市汐止区新台五路1段88号21楼 TW |