METHOD OF FORMING AN EPITAXIAL LAYER, AND APPARATUS FOR PROCESSING A SUBSTRATE USED FOR THE METHOD

摘要

According to a method for forming an epitaxial layer, a first plasma is generated from a first reaction gas in a first region. A second plasma is generated from a second reaction gas by applying the first plasma with the second reaction gas supplied to a second region separated from the first region. A blocking gas, which is for preventing a horizontal spread of the first and the second plasma, is sprayed toward an edge of the substrate and into the second region. The first and the second plasma are applied to the substrate to form an epitaxial layer. Accordingly, it is possible to form an epitaxial layer at a relatively low temperature compared with a thermal process. In addition, as a plasma is individually generated in two independent regions, it is possible to form a plasma having a desired density.