测试器件群场效应晶体管及其测试器件群测试方法;Test element group field-effect transistor and the testing method thereof

摘要

一种测试器件群场效应晶体管，包括：基板；源极区，位于所述基板之中；汲极区，位于所述基板之中，并在所述基板的水平方向上与所述源极区相对布置；介电层，在所述基板的垂直方向上覆盖于所述基板之上；以及闸极区，在所述垂直方向上位于所述介电层之上，并在所述水平方向上位于所述源极区和所述汲极区之间，其中，所述闸极区远离在所述水平方向上从所述源极区的中心区域指向所述汲极区的中心区域的轴线。一种测试器件群测试方法，用于测试所述场效应晶体管。能够测量测试器件群场效应晶体管的边缘处的可靠性和工作特性，能够更全面地了解半导体器件的産品质量，有利于半导体器件産品质量的提高。; a source region, mounted at the substrate; a drain region, mounted at the substrate that relative to the source region in a horizontal direction of the substrate; a dielectric, covering the substrate in the vertical direction; and a gate region, mounted at dielectric in the vertical direction and between the source region and the drain region in the horizontal direction. The gate region is mounted away the axis that from the central area of the source region point to the central area of the drain region in the horizontal direction. A test element group test method for testing the field-effect transistor. The present invention is able to measure the reliability and operating characteristics of the device at the edge of the test group of field effect transistors. More comprehensive understanding of the product quality of the semiconductor device, and improve the quality of the semiconductor device.