| 摘要 |
Provided is a processing method for a thin-film transistor, comprising: forming a buffer layer and a polysilicon layer in sequence; forming a gate insulation layer on the polysilicon layer, and etching the gate insulation layer to expose the polysilicon layer which requires ohmn contact; forming an ohmn contact layer above the gate insulation layer and the polysilicon layer, etching unnecessary areas of the ohmn contact layer, and reserving the the ohmn contact layer which is in contact with the polysilicon layer; forming a gate electrode above the gate insulation layer; forming a dielectric layer above the gate electrode and the gate insulation layer, and forming a via hole; and forming a source electrode and a drain electrode on the via hole. The method eliminates over-etching of a polysilicon layer or residual of an ohmn contact layer in a channel region caused in the process of etching an ohmn contact layer. |
