METHOD OF MANUFACTURING LAYER STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a method in which a layer having large layer thickness and high material quality and using gallium nitride as a base is epitaxially deposited on a silicon surface.SOLUTION: Disclosed is a method of manufacturing a layer structure 100 which includes the steps of: forming a carrier substrate 1 having the silicon surface 1a; and depositing a series of layers on the silicon surface 1a in the growth direction R. The series of layers includes a GaN layer 5 formed by using gallium nitride, and masking layer 12 formed by using silicon nitride. In the growth direction R, the masking layer 12 follows the rear of at least a portion of the GaN layer 5.