发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions. |
申请公布号 |
US2015295093(A1) |
申请公布日期 |
2015.10.15 |
申请号 |
US201514728077 |
申请日期 |
2015.06.02 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei |
分类号 |
H01L29/786;H01L29/423;H01L29/04;H01L27/12 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi--shi JP |