| 发明名称 |
MEMORY SYSTEM, METHOD OF PROGRAMMING THE MEMORY SYSTEM, AND METHOD OF TESTING THE MEMORY SYSTEM |
| 摘要 |
A method of programming a memory system includes repetitively performing N program loops for a selected memory cell (where N is a natural number equal to or greater than two). Each of the N program loops includes a program operation and a program verify operation. At least one of the N program loops includes performing the program operation on the selected memory cell and on at least one additionally selected memory cell by applying a program voltage to at least one word line to which the selected memory cell and at least one additionally selected memory cell are connected, and performing the program verify operation on the selected memory cell by applying a program verify voltage to a selected word line to which the selected memory cell is connected. |
| 申请公布号 |
US2015294725(A1) |
申请公布日期 |
2015.10.15 |
| 申请号 |
US201514616786 |
申请日期 |
2015.02.09 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG KYUNG-MIN;KIM DAE-HAN |
| 分类号 |
G11C16/10;G11C16/34 |
主分类号 |
G11C16/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of programming a memory system, comprising:
repetitively performing N program loops for a selected memory cell, where N is a natural number equal to or greater than two, each of the N program loops including a program operation and a program verify operation, wherein at least one of the N program loops comprises: performing the program operation on the selected memory cell and at least one additionally selected memory cell by applying a first voltage to at least one word line to which the selected memory cell and the at least one additionally selected memory cell are connected; and performing the program verify operation on the selected memory cell by applying a second voltage to a selected word line to which the selected memory cell is connected. |
| 地址 |
SUWON-SI KR |
