| 发明名称 |
PATTERN BETWEEN PATTERN FOR LOW PROFILE SUBSTRATE |
| 摘要 |
An integrated circuit (IC) substrate that includes a second patterned metal layer formed in between a first patterned metal layer is disclosed. A dielectric layer formed on the first patterned metal layer separates the two metal layers. A non-conductive layer is formed on the dielectric layer and the second patterned metal layer. |
| 申请公布号 |
US2015294933(A1) |
申请公布日期 |
2015.10.15 |
| 申请号 |
US201414253798 |
申请日期 |
2014.04.15 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
We Hong Bok;Kim Chin-Kwan;Kim Dong Wook;Lee Jae Sik;Hwang Kyu-Pyung;Song Young Kyu |
| 分类号 |
H01L23/528;H01L23/522;H01L21/768;H01L23/532 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit (IC) substrate, comprising:
a first patterned metal layer formed on a substrate; a dielectric layer formed on the first patterned metal layer; a second patterned metal layer formed on the dielectric layer and in between the first patterned metal layer; and a non-conductive layer formed on the dielectric layer and the second patterned metal layer. |
| 地址 |
San Diego CA US |
