| 发明名称 |
Method of Manufacturing Semiconductor Devices Containing Chalcogen Atoms |
| 摘要 |
Chalcogen atoms are implanted into a single crystalline semiconductor substrate. At a density of interstitial oxygen of at least 5E16 cm−3 thermal donors containing oxygen are generated at crystal defects in the semiconductor substrate. Then the semiconductor substrate is heated up to a temperature above a deactivation temperature at which the thermal donors become inactive, wherein a portion of electrically active chalcogen atoms is increased. |
| 申请公布号 |
US2015294868(A1) |
申请公布日期 |
2015.10.15 |
| 申请号 |
US201414253519 |
申请日期 |
2014.04.15 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Schmidt Gerhard;Riss Josef;Neidhart Thomas |
| 分类号 |
H01L21/225;H01L29/167;H01L29/36;H01L21/322 |
主分类号 |
H01L21/225 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
implanting chalcogen atoms into a single crystalline semiconductor substrate; generating thermal donors containing oxygen at crystal defects in the semiconductor substrate at a density of interstitial oxygen of at least 5E16 cm−3; and then heating the semiconductor substrate up to a temperature above a deactivation temperature at which the thermal donors become inactive, wherein a portion of electrically active chalcogen atoms is increased. |
| 地址 |
Neubiberg DE |
