发明名称 SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To minimize circuit area and provide a semiconductor device having a circuit which achieves high withstand voltage.SOLUTION: In a circuit to which high voltage is applied, an OS (Oxide Semiconductor) transistor is used for a part of a transistor included in a circuit for handling an analog signal. By using an OS transistor which is excellent in withstand voltage for a transistor which requires high withstand voltage, circuit area can be minimized without deteriorating performance in comparison with the case fo using an Si transistor. In addition, since the OS transistor can be provided on the Si transistor and transistors having different semiconductor layers can be provided in a laminated manner, the circuit area can be further minimized.
申请公布号 JP2015181227(A) 申请公布日期 2015.10.15
申请号 JP20150039762 申请日期 2015.03.02
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TAKAHASHI KEI;MIYAKE HIROYUKI;MIYAIRI HIDEKAZU
分类号 H03M1/76;G02F1/133;G09G3/20;G09G3/30;G09G3/36;H01L21/8234;H01L27/08;H01L27/088;H01L29/786;H01L51/50 主分类号 H03M1/76
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