SEMICODUCTOR DEVICE HAVING THROUGH ELEECTRODE CAPPED BY SELF-ALIGNED PROTECTIVE LAYER

摘要

The present invention relates to a semiconductor device having a through via and a manufacturing method thereof. The semiconductor device of the present invention includes: a semiconductor substrate where an integrated circuit is arranged; an interlayer insulating film which covers the integrated circuit by being provided on the semiconductor substrate; an intermetal insulating film which is provided on the interlayer insulating film and includes at least one metal wire electrically connected to the integrated circuit; and the through via which is connected to the metal wire electrically by penetrating the interlayer insulating film and the semiconductor substrate. An upper part of the through via facing the metal wire can be capped with a first protective layer which hinders a component of the through via from being deviated from the through via and is self-aligned to the through via.