| 摘要 |
This insulating gate-type semiconductor device has a semiconductor substrate, a front surface electrode, and a rear surface electrode, and performs switching between the front surface electrode and the rear surface electrode. The insulating gate-type semiconductor device has: a first outer peripheral trench that is formed in the front surface of the semiconductor substrate; a second outer peripheral trench, which is formed in the front surface of the semiconductor substrate, and which is deeper than the first outer peripheral trench; a second conductivity-type fifth region that is exposed from the bottom surface of the first outer peripheral trench; a second conductivity-type sixth region, which is exposed from the bottom surface of the second outer peripheral trench, and which has a front surface-side end portion thereof positioned further toward the rear surface side than a rear surface-side end portion of the fifth region; and a first conductivity-type seventh region that isolates the fifth region from the sixth region. |
