发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device presented herein includes a first wiring including a first end and a second end configured to receive a voltage lower than a voltage of the first end. The semiconductor device includes a second wiring including a third end connected to the first end, and a fourth end connected to the second end. The semiconductor device includes a switching element set on the first wiring, a capacitor set on the second wiring, and a fuse portion set on the second wiring and positioned on a third end side of the capacitor. The semiconductor device includes a potential sensing portion connected to the second wiring between the fuse portion and the capacitor and configured to sense a potential of a connection point thereof.
申请公布号 US2015295489(A1) 申请公布日期 2015.10.15
申请号 US201214443532 申请日期 2012.12.25
申请人 IMAI Makoto 发明人 Imai Makoto
分类号 H02M1/32;H02M3/337;H01L23/528;H01L27/06;H01L23/525 主分类号 H02M1/32
代理机构 代理人
主权项 1. A semiconductor device, comprising: a first wiring including a first end and a second end configured to receive a voltage lower than a voltage of the first end; a second wiring including a third end connected to the first end, and a fourth end connected to the second end; a switching element set on the first wiring; a capacitor set on the second wiring; a fuse portion set on the second wiring and positioned on a third end side of the capacitor; a potential sensing portion connected to the second wiring between the fuse portion and the capacitor and configured to sense a potential of a connection point thereof; and a control device configued to reduce a current flowing through the switching element and make the reduced current flow through the switching element when the second wiring is determined, from the potential sensed by the potential sensing portion, to have broken off.
地址 Toyota-shi, Aichi JP