METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

摘要

A substrate processing apparatus in which an improved film quality is obtained is disclosed. A precursor gas supply process of supplying a precursor gas to a process chamber while maintaining a substrate accommodated in the process chamber at a first temperature, a first removal process of removing the precursor gas remaining in the process chamber by supplying an inert gas, which is heated at a second temperature higher than the first temperature, to the process chamber, a reaction gas supply process of supplying a reaction gas to the process chamber, and a second removal process of removing the reaction gas remaining in the process chamber by supplying an inert gas to the process chamber are performed.

主权项

1. A method of manufacturing a semiconductor device, comprising:
(a) supplying a precursor gas to a substrate accommodated in a process chamber while maintaining the substrate at a first temperature; (b) supplying a first inert gas, which is heated at a second temperature higher than the first temperature, to the substrate; (c) supplying a reaction gas to the substrate; and (d) supplying a second inert gas to the substrate.