| 摘要 |
Provided are: a method for processing a semiconductor substrate, the method including a step for joining a support board to a semiconductor substrate, and a step for separating the joined support board from the semiconductor substrate; and a method for manufacturing a semiconductor device in which the processing method is used. Intermediate layers (8) in which a material that absorbs laser light constitutes the main component are individually formed on the main surface of a semiconductor substrate (1) in which a material that substantially transmits the wavelengths of the laser light constitutes the main component, and on the main surface of a support board (4) in which a material that substantially transmits the wavelengths of the laser light constitutes the main component. The main surface of the semiconductor substrate on which the intermediate layer (8) is formed and the support board on which the intermediate layer is formed are made to face each other, and are pressed and joined in a vacuum. In addition, the laser beam (9) is irradiated from the support board side, the intermediate layers (8) are made to absorb laser energy and are fractured, and the semiconductor substrate (1) and the support board (4) are separated. |
