| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-crystallinity conductiveα-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>thin film to which a dopant is added, and a method of forming the same. <P>SOLUTION: There is provided the method of forming the conductiveα-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>thin film with high crystallinity that includes the processes of: (a) preparing a raw material solution by mixing a gallium compound and a stannic compound with a solution containing water, hydrochloric acid, and hydrogen peroxide; (b) preparing a mist-like raw material by making the raw material solution into mist; (c) supplying the mist-like raw material to a film formation surface of a substrate with carrier gas; and (d) thermal decomposing the mist-like raw material by heating the substrate, and forming the conductiveα-Ga<SB POS="POST">2</SB>O<SB POS="POST">3</SB>thin film in which tetratomic tin is added onto the substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
