| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To stably provide a high-quality single crystal diamond useful as a substrate for a semiconductor device, and having a large area and little strain. <P>SOLUTION: The single crystal diamond is grown by a vapor phase synthesis method, wherein the retardation between two mutually orthogonal linearly polarized lights outgoing from a principal surface being the opposite surface by irradiation of a linearly polarized light regarded as the synthesis of two mutually orthogonal linearly polarized lights on the other principal surface is a maximum of≤50 nm per 100μm of a sample thickness across the whole sample. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
