| 摘要 |
<p>The invention relates to a process for producing metallized metal-ceramic substrates as circuit carriers, especially for high-performance semiconductor components or high-performance semiconductor modules. In the process of the invention, an aluminum-magnesium layer 2 or aluminum-silicon layer 2 is applied to a copper sheet or film 1, with a cohesive bonding of the coated copper sheet or film to a ceramic substrate 3 by means of a process temperature well below the process temperature of the known DCB (direct copper bonding) process. Because of the relatively low process temperature, the mechanical stresses resulting from the different thermal coefficients of the mutually bonded materials 1, 2, 3 are lower than in the case of the composite of a ceramic substrate and an oxidized copper sheet or film according to the DCB process. Secondly, the metal-ceramic substrate produced by the process of the invention has improved electrical properties compared to the known composite of ceramic substrate and aluminum sheet or film which has been coated with an aluminum-silicon layer.</p> |
