Growing buffer layers in bulk finFET structures

摘要

A semiconductor structure may be formed by forming a fin on a substrate, forming a gate over a portion of the fin, removing a portion of the fin not below the gate to expose a sidewall of the fin beneath the gate and a top surface of the substrate, forming a first protective layer on the top surface of the substrate but not on the sidewall of the fin, forming a second protective layer on the sidewall of the fin prevented from forming on the top surface of the substrate by the first protective layer, removing the first protective layer to expose the top surface of the substrate, forming a buffer layer on the top surface of the substrate; the buffer layer prevented from forming on the sidewall of the fin by the second protective layer, and forming a source-drain region on the buffer layer electrically connected to the fin.

主权项

1. A method of forming a semiconductor structure, the method comprising:
forming a fin on a semiconductor substrate; forming a gate over a portion of the fin; removing a portion of the fin not below the gate to expose a sidewall of the fin beneath the gate and a top surface of the semiconductor substrate; forming a first protective layer on the top surface of the semiconductor substrate, the first protective layer not on the sidewall of the fin; forming a second protective layer on the sidewall of the fin, the second protective layer prevented from forming on the top surface of the semiconductor substrate by the first protective layer; removing the first protective layer to expose the top surface of the semiconductor substrate; forming a buffer layer on the top surface of the semiconductor substrate; the buffer layer prevented from forming on the sidewall of the fin by the second protective layer; and forming a source-drain region on the buffer layer, the source-drain region electrically connected to the fin.