Method for block-erasing a page-erasable EEPROM-type memory

摘要

A method for erasing a page-erasable EEPROM-type memory includes: the memory receiving a command associated with a set of addresses of pages of the memory to be erased, each page comprising several memory cell groups each forming a word, for each address of the set of addresses, selecting a word line corresponding to a page of the memory, and triggering the simultaneous erasing of all the selected word lines.

主权项

1. A method, comprising:
receiving at a page-erasable EEPROM memory an erase command associated with a set of addresses of pages of the memory to be erased, each page including plural groups of memory cells, each group forming a hardware word, the memory including a plurality of word lines corresponding respectively to the pages; selecting word lines respectively corresponding to the addresses of the set; and concurrently erasing all the selected word lines, wherein selecting the word lines includes, for each of the word lines respectively corresponding to the addresses of the set, changing to an active state a latch coupled to the word line, the latch supplying a high erase voltage to gates of floating-gate transistors of all the memory cells of the word line in response to receiving an erase-trigger signal.