发明名称 Graphene interconnection and method of manufacturing the same
摘要 According to one embodiment, a graphene interconnection includes an insulating film, a catalyst film, and a graphene layer. An insulating film includes an interconnection trench. A catalyst film is formed in the interconnection trench and filling at least a portion of the interconnection trench. A graphene layer is formed on the catalyst film in the interconnection trench, and including graphene sheets stacked in a direction perpendicularly to a bottom surface of the interconnection trench.
申请公布号 US9159615(B2) 申请公布日期 2015.10.13
申请号 US201113216435 申请日期 2011.08.24
申请人 Kabushiki Kaisha Toshiba 发明人 Saito Tatsuro;Wada Makoto;Kajita Akihiro;Sakata Atsuko
分类号 H01L23/532;H01L21/768 主分类号 H01L23/532
代理机构 White & Case LLP 代理人 White & Case LLP
主权项 1. A graphene interconnection comprising: an insulating film including an interconnection trench; a catalyst underlying film formed on both side surfaces and the bottom surface of the interconnection trench; a catalyst film formed on the catalyst underlying film in the interconnection trench and filling at least a portion of the interconnection trench; and a graphene layer formed on the catalyst film in the interconnection trench, and including graphene sheets stacked in a direction perpendicularly to a bottom surface of the interconnection trench, wherein the graphene layer has an upper surface higher than an upper surface of the interconnection trench, and a lower surface lower than the upper surface of the interconnection trench, an end portion of a lower portion of the graphene layer is directly contact with the catalyst underlying film, and among the graphene sheets forming the graphene layer, end portions of not less than two graphene sheets are directly contact with the catalyst underlying film.
地址 Minato-Ku, Tokyo JP
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