发明名称 High pressure apparatus and method for nitride crystal growth
摘要 A high pressure apparatus and related methods for processing supercritical fluids are disclosed. In certain embodiments, the present apparatus includes a capsule, a heater, at least one ceramic ring or multiple rings, optionally, with one or more scribe marks and/or cracks present. In certain embodiments, the apparatus has a metal sleeve containing each ceramic ring. The apparatus also has a high strength enclosure, end flanges with associated insulation, and a power control system. In certain embodiments, a high pressure apparatus is constructed such that the diametric annular gap between the outer diameter of the heater and the ceramic ring is selected to provide radial load-bearing contact above a particular temperature and pressure. In certain embodiments, the apparatus is capable of accessing pressures of 0.2 GPa to 2 GPa and temperatures of 400° C. to 1200° C.
申请公布号 US9157167(B1) 申请公布日期 2015.10.13
申请号 US201213556105 申请日期 2012.07.23
申请人 Soraa, Inc. 发明人 Pakalapati Rajeev T.;D'Evelyn Mark P.
分类号 C30B7/10 主分类号 C30B7/10
代理机构 Saul Ewing LLP 代理人 Saul Ewing LLP
主权项 1. An apparatus for high pressure material processing comprising: a cylindrical capsule opening for retaining a capsule having a length; an annular heating member having a length and an outer diameter, and surrounding at least a portion of the length of the capsule opening; a radial heater restraint surrounding at least a portion of the length of the annular heating member, the radial heater restraint having an inner diameter and comprising a high strength enclosure; and an annular gap defined by the outer diameter of the annular heating member and the inner diameter of the radial heater restraint, wherein the annular gap is at least 0.005 inch at room temperature and is configured to provide a radial load-bearing contact between the annular heating member and the radial heater restraint at a temperature not less than about 100 degrees Celsius.
地址 Fremont CA US