发明名称 |
Back contact having selenium blocking layer for photovoltaic devices such as copper—indium-diselenide solar cells |
摘要 |
A photovoltaic device (e.g., solar cell) includes: a front substrate (e.g., glass substrate); a semiconductor absorber film; a back contact including a first conductive layer of or including copper (Cu) and a second conductive layer of or including molybdenum (Mo); and a rear substrate (e.g., glass substrate). A selenium blocking layer is provided between at least the Cu inclusive layer and the Mo inclusive layer. |
申请公布号 |
US9159850(B2) |
申请公布日期 |
2015.10.13 |
申请号 |
US201213729074 |
申请日期 |
2012.12.28 |
申请人 |
Guardian Industries Corp. |
发明人 |
Krasnov Alexey |
分类号 |
H01L31/0224;H01L31/0392 |
主分类号 |
H01L31/0224 |
代理机构 |
Nixon & Vanderhye P.C. |
代理人 |
Nixon & Vanderhye P.C. |
主权项 |
1. A photovoltaic device, comprising:
a front substrate; a semiconductor absorber film; a rear contact comprising a first conductive layer comprising copper, a second conductive layer comprising molybdenum, and a selenium blocking layer comprising an oxide of copper located between at least the first conductive layer comprising copper and the second conductive layer comprising molybdenum; and a rear substrate; wherein the first conductive layer comprising copper is located between at least the rear substrate and the selenium blocking layer, and wherein the semiconductor absorber film is located between at least the rear contact and the front substrate. |
地址 |
Auburn Hills MI US |