| 发明名称 | Nitride semiconductor structure | ||
| 摘要 | A nitride semiconductor structure including a silicon substrate, a nucleation layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer, in which the buffer layer includes n sub-buffer layers where n≧2, and each of the sub-buffer layers has island structures. The nitride semiconductor layer is disposed on the buffer layer. | ||
| 申请公布号 | US9159788(B2) | 申请公布日期 | 2015.10.13 |
| 申请号 | US201314144566 | 申请日期 | 2013.12.31 |
| 申请人 | Industrial Technology Research Institute | 发明人 | Hu Chih-Wei;Liao Chen-Zi;Liu Hsun-Chih;Xuan Rong |
| 分类号 | H01L31/0256;H01L29/06;H01L29/267;H01L29/32 | 主分类号 | H01L31/0256 |
| 代理机构 | Jianq Chyun IP Office | 代理人 | Jianq Chyun IP Office |
| 主权项 | 1. A nitride semiconductor structure, comprising: a silicon substrate; a nucleation layer, disposed on the silicon substrate, wherein the silicon substrate comprises a surface in contact with the nucleation layer and a plurality of cavities, and the cavities are concave on the surface; a buffer layer, disposed on the nucleation layer, wherein the buffer layer comprises n sub-buffer layers where n≧2, and each of the sub-buffer layers has island structures; and a nitride semiconductor layer, disposed on the buffer layer. | ||
| 地址 | Hsinchu TW | ||