Package on wide I/O silicon

摘要

An apparatus including a die including a device side and an opposite backside, first contacts on the backside and a through vias from the device side to the first contacts and second contacts on the backside of the die or on at least two opposing sidewalls of the die; a secondary die coupled to the first plurality of contacts; and a carrier including carrier contact points operable for mounting the carrier to a substrate. A method including forming a first portion of a carrier adjacent a device side of a die and including carrier contact points operable for mounting the carrier to a substrate; and forming a second portion including second carrier contact points connected to contacts on the backside of the die or on at least two opposing sidewalls of the die; and coupling a secondary die to the second carrier contact points.

主权项

1. An apparatus comprising:
a die comprising a device side and an opposite backside, a first plurality of contacts on the backside and a plurality of through vias from the device side to the first plurality of contacts and a different second plurality of contacts on one of the backside of the die and on at least two opposing sidewalls of the die; a secondary die coupled to the first plurality of contacts; and a carrier comprising on a device side of the die at least one patterned layer of conductive material disposed in a first dielectric material, a first plurality of carrier contact points operable for mounting the carrier to a substrate, and a second plurality of carrier contact points on a side opposite a side of the first plurality of carrier contact points, at least ones of the second plurality of carrier contact points coupled to the second plurality of contacts of the die, wherein the carrier comprises a second dielectric material disposed between respective ones of the second plurality of contacts of the die and the second plurality of carrier contact points, the second dielectric material embedding at least opposing sides of the secondary die.