发明名称 Solid-state image pickup device
摘要 A solid-state image pickup device 1 includes a semiconductor substrate 10, light receiving unit 14 and light shielding film 20. The solid-state image pickup device 1 is back surface incident type and photoelectrically converts light indent on the back surface S2 of the semiconductor substrate 10 from an object into electrical charges and receives electrical charges produced by photoelectric conversion at the light receiving unit 14 to image the object. The light receiving unit 14 forms a PN junction diode with the semiconductor substrate 10. The light shielding film 20 is provided over a front surface S1 of the semiconductor substrate 10 so as to cover the light receiving unit 14. The light shielding film 20 serves to shield light incident on the front surface S1 from the outside of the solid-state image pickup device 1.
申请公布号 US9159759(B2) 申请公布日期 2015.10.13
申请号 US201113078676 申请日期 2011.04.01
申请人 RENESAS ELECTRONICS CORPORATION 发明人 Nakashiba Yasutaka
分类号 H01L27/148;H01L27/146 主分类号 H01L27/148
代理机构 Young & Thompson 代理人 Young & Thompson
主权项 1. A solid-state image pickup device, comprising: a light receiving unit that converts light incident on a back surface of a semiconductor substrate, said light receiving unit located on a side of a front surface of said semiconductor substrate and within a thickness of said semiconductor substrate; an interconnect layer located over the side of the front surface of said semiconductor substrate; a light shielding film located in said interconnect layer that covers said light receiving unit and prevents light incident on the front surface from entering the semiconductor substrate; a transistor formed adjacently to said light receiving unit; an interconnect electrically connected to said transistor; and an element isolation region, in at least one of the interconnect layer and the semiconductor substrate, that isolates the transistor, wherein said interconnect is formed between said light receiving unit and said light shielding film, wherein said light shielding film covers said transistor, said interconnect, said light receiving unit, and said element isolation region, and wherein said light shielding film is not electrically connected to said interconnect.
地址 Kanagawa JP