| 摘要 |
<p>The invention relates to a power semiconductor circuit comprising a power semiconductor switch having a control terminal and a first and a second load current terminal, and comprising a drive circuit, • wherein a temperature-dependent control terminal resistance element is electrically connected between the drive circuit and the control terminal, and/or • wherein a temperature-dependent load current terminal resistance element is electrically connected between the drive circuit and the second load current terminal, and/or • wherein the control terminal is electrically connected to the second load current terminal via a first current branch, wherein a temperature-dependent control load current terminal resistance element is electrically connected into the first current branch. In the event of heating of a power semiconductor switch, the invention reduces the switching losses of the power semiconductor switch.</p> |
