发明名称 Semiconductor Device and Method
摘要 In accordance with an embodiment a first semiconductor die and a second semiconductor die are bonded to a first substrate. A protective cap is formed over and between the first semiconductor die and the second semiconductor die. An encapsulant is placed over the protective layer and portions of the encapsulant are removed in order to expose the protective cap or, alternatively, to expose the first semiconductor device and the second semiconductor device. The first substrate may then be bonded to a second substrate.
申请公布号 US2015287697(A1) 申请公布日期 2015.10.08
申请号 US201414243517 申请日期 2014.04.02
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 Tsai Chen-Yu;Wei Tsung-Shang;Lin Yu-Sheng;Chiou Wen-Chih;Jeng Shin-Puu
分类号 H01L25/065;H01L23/31;H01L21/56;H01L25/00;H01L23/538 主分类号 H01L25/065
代理机构 代理人
主权项 1. A semiconductor device comprising: a first semiconductor device bonded to a first side of a first substrate, the first semiconductor device comprising a first sidewall; a second semiconductor device bonded to the first side of the first substrate, the second semiconductor device comprising a second sidewall; a conductive protective cap in physical contact with the first sidewall, the second sidewall, and the first substrate; and an encapsulant between the first semiconductor device and the second semiconductor device, the encapsulant over at least a portion of the conductive protective cap.
地址 Hsin-Chu TW