THREE DIMENSIONAL DEVICE INTEGRATION METHOD AND INTEGRATED DEVICE

摘要

A device integration method and integrated device. The method may include the steps of directly bonding a semiconductor device having a substrate to an element; and removing a portion of the substrate to expose a remaining portion of the semiconductor device after bonding. The element may include one of a substrate used for thermal spreading, impedance matching or for RF isolation, an antenna, and a matching network comprised of passive elements. A second thermal spreading substrate may be bonded to the remaining portion of the semiconductor device. Interconnections may be made through the first or second substrates. The method may also include bonding a plurality of semiconductor devices to an element, and the element may have recesses in which the semiconductor devices are disposed. A conductor array having a plurality of contact structures may be formed on an exposed surface of the semiconductor device, vias may be formed through the semiconductor device to device regions, and interconnection may be formed between said device regions and said contact structures.

主权项

1. An integration method, comprising:
forming a first layer of bondable material with a surface roughness less than about 1 nm (rms) on a first element; preparing a second element having a surface roughness of less than about 1 nm (rms); bringing into direct contact said first layer of bondable material with said second element; directly bonding said first layer of bondable material to said second element; and obtaining a bond strength at about room temperature sufficient to permit removing a portion of said first element by one of polishing and grinding to leave a remaining portion of said first element after said bonding.