发明名称 |
PLASMA PROCESSING WITH PREIONIZED AND PREDISSOCIATED TUNING GASES AND ASSOCIATED SYSTEMS AND METHODS |
摘要 |
Plasma processing systems and methods for using pre-dissociated and/or pre-ionized tuning gases are disclosed herein. In one embodiment, a plasma processing system includes a reaction chamber, a support element in the reaction chamber, and one or more cathode discharge assemblies in the reaction chamber. The reaction chamber is configured to produce a plasma in an interior volume of the chamber. The support element positions a microelectronic workpiece in the reaction chamber, and the cathode discharge assembly supplies an at least partially dissociated and/or ionized tuning gas to the workpiece in the chamber. |
申请公布号 |
US2015287571(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
US201514745803 |
申请日期 |
2015.06.22 |
申请人 |
Micron Technology, Inc. |
发明人 |
Kiehlbauch Mark |
分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
1. A plasma reactor, comprising:
a reaction chamber; a support element in the chamber for carrying a microelectronic workpiece in a workpiece plane; one or more cathode discharge assemblies in the chamber, wherein individual cathode discharge assemblies have a flow port configured to direct a tuning gas upwardly away from the workpiece plane, wherein the individual cathode discharge assemblies further include a cathode and an anode at or around an outer perimeter of the support element, the cathode and the anode configured to at least partially dissociate and/or ionize the tuning gas by an electrical field formed at least partially between the cathode and the anode; and a power supply electrically coupled with the cathode discharge assemblies to control the electrical field that causes the dissociation and/or ionization of the tuning gas within the flow port. |
地址 |
Boise ID US |