发明名称 PLASMA PROCESSING WITH PREIONIZED AND PREDISSOCIATED TUNING GASES AND ASSOCIATED SYSTEMS AND METHODS
摘要 Plasma processing systems and methods for using pre-dissociated and/or pre-ionized tuning gases are disclosed herein. In one embodiment, a plasma processing system includes a reaction chamber, a support element in the reaction chamber, and one or more cathode discharge assemblies in the reaction chamber. The reaction chamber is configured to produce a plasma in an interior volume of the chamber. The support element positions a microelectronic workpiece in the reaction chamber, and the cathode discharge assembly supplies an at least partially dissociated and/or ionized tuning gas to the workpiece in the chamber.
申请公布号 US2015287571(A1) 申请公布日期 2015.10.08
申请号 US201514745803 申请日期 2015.06.22
申请人 Micron Technology, Inc. 发明人 Kiehlbauch Mark
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A plasma reactor, comprising: a reaction chamber; a support element in the chamber for carrying a microelectronic workpiece in a workpiece plane; one or more cathode discharge assemblies in the chamber, wherein individual cathode discharge assemblies have a flow port configured to direct a tuning gas upwardly away from the workpiece plane, wherein the individual cathode discharge assemblies further include a cathode and an anode at or around an outer perimeter of the support element, the cathode and the anode configured to at least partially dissociate and/or ionize the tuning gas by an electrical field formed at least partially between the cathode and the anode; and a power supply electrically coupled with the cathode discharge assemblies to control the electrical field that causes the dissociation and/or ionization of the tuning gas within the flow port.
地址 Boise ID US