THIN FILM FORMATION APPARATUS, SPUTTERING CATHODE, AND METHOD OF FORMING THIN FILM

摘要

Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber.

主权项

1. A thin film formation apparatus for forming a thin film of a metal compound on a substrate in a vacuum chamber by sputtering, the apparatus comprising:
a target, provided in the vacuum chamber, composed of metal or a conductive metal compound, and an active species source, provided in the vacuum chamber, for generating an active species of a reactive gas that is arranged to produce mutual electromagnetic and pressure interactions with the target, wherein: the active species source comprises
a gas source for supplying the reactive gas, andan energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state; the target that is arranged to be opposed to the substrate; the energy source comprises between itself and the vacuum chamber a dielectric window for supplying the energy into the vacuum chamber; and the dielectric window is arranged in parallel with the substrate, or in such a way as inclining towards the target side at an angle of less than 90° to the substrate.