LIGHT-EMITTING DEVICE AND LIGHTING APPARATUS HAVING SAME

摘要

A light-emitting device according to an embodiment comprises a first conductive semiconductor layer, a second conductive semiconductor layer below the first conductive semiconductor layer, and a first active layer between the first conductive semiconductor layer and the second conductive semiconductor layer. The light-emitting device comprises: a nitride-based light-emitting structure layer; a first electrode electrically connected to the first conductive semiconductor layer; a contact layer, of conductive material, attached below the second conductive semiconductor layer; a reflective layer placed below the contact layer; a capping layer placed below the reflective layer; and a conductive supporting member placed below the capping layer, wherein the reflective layer comprises a thickness that is greater than the thickness of the second conductive semiconductor layer and 90 or more times greater than the thickness of the contact layer.