SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an art to form a manganese oxide layer 25 on a surface of copper wiring 14 in a semiconductor device manufacturing method in which the surface of the copper wiring 14 exposed on a surface of an interlayer insulation film 11.SOLUTION: A semiconductor device manufacturing method comprises the steps of: carrying to an annealing device, a wafer W where copper wiring 14 is exposed on a surface of an interlayer insulation film 11 by polishing and performing an annealing treatment to remove a thin layer 23 of BTA (Benzotriazole) included in a slurry used at the time of polishing from the surface of the copper wiring 14; subsequently oxidizing the surface of the copper wiring 14 by storing the wafer W in a transport container C and exposing the wafer W to atmospheric air to form a CuOlayer 24; subsequently, transferring the transport container C to a vacuum processing apparatus including an ALD (Atomic Layer Deposition) device 5; and alternately supplying a material gas made from amide amino alkane manganese compound and moisture vapor to the wafer W in the ALD device 5 to form a manganese oxide layer 25 on the surface of the copper wiring 14.