| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor, in which contact resistance of a source electrode or a drain electrode is reduced, in the thin-film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), and to provide a method of manufacturing the thin-film transistor.SOLUTION: An ohmic contact is formed by intentionally providing a buffer layer having higher carrier concentration than an IGZO semiconductor layer between the IGZO semiconductor layer and the source layer and the drain electrode layer. |
