VERTICAL CAVITY SURFACE EMITTING LASERS WITH SILICON-ON-INSULATOR HIGH CONTRAST GRATING

摘要

A surface emitting laser apparatus is formed using a patterned silicon-on-insulator (SOI)-like substrate which is patterned with a buried sub-wavelength high contrast grating and adapted for bonding of a half-VCSEL device containing at least an active region and an upper mirror, to create a VCSEL. The wavelength of the VCSEL, or any individual VCSEL within an array of VCSEL devices, can be set in response to changing HCG characteristics of the lower mirror in the SOI-like substrate, or in the region above the lower mirror within the half-VCSEL. The inventive VCSEL device and fabrication method are beneficial for a number of application and devices.

主权项

1. A surface-emitting laser apparatus, comprising:
a half-VCSEL laser heterostructure having an upper mirror reflector, and an active region beneath said upper mirror reflector; and a high-contrast grating (HCG) pre-patterned silicon-on-insulator (SOI) substrate comprising a buried high contrast grating disposed between spacing layers as a lower mirror reflector; wherein attaching said half-VCSEL to said HCG pre-patterned silicon-on-insulator (SOI) substrate results in a surface-emitting laser device.