OPTICAL DEVICE INCLUDING THREE-COUPLED QUANTUM WELL STRUCTURE

摘要

An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.

主权项

1. An optical device comprising:
a lower reflection layer doped with a first conductive-type dopant; an active layer on the lower reflection layer and including at least two outer barriers and at least one coupled quantum well between the at least two outer barriers; and an upper reflection layer on the active layer and doped with a second conductive-type dopant that is electrically opposite to the first conductive-type dopant, wherein each coupled quantum well includes at least three quantum well layers and at least two coupling barriers respectively provided between the at least three quantum well layers, thicknesses of two quantum well layers at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer between the two quantum well layers, and energy levels of the two quantum well layers at the opposite end portions are higher than an energy level of the other quantum well layer between the two quantum well layers.