发明名称 |
BONDING WIRE FOR USE WITH SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAID BONDING WIRE |
摘要 |
A bonding wire for use with semiconductor devices that, in order to minimize leaning problems and spring problems, is characterized in that: (1) a cross-section that is parallel to the lengthwise direction of the wire and contains the center of the wire (a wire-center cross-section) contains no crystal grains (fibrous structures) that have a major axis (a)/minor axis (b) ratio (a/b) of 10 or more and an area of 15 µm2 or more; (2) at least 10% but less than 50% of the area of the wire-center cross-section exhibits a crystal orientation of <100> within 15° of the lengthwise direction of the wire; and (3) at least 70% of the area of the surface of the wire exhibits a crystal orientation of <100> within 15° of the lengthwise direction of the wire. During a wire-drawing step, wire drawing that results in an area reduction of at least 15.5% is performed at least once, and a final heat-treatment temperature and a final pre-heat-treatment temperature are set to within prescribed ranges. |
申请公布号 |
WO2015152197(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
WO2015JP60041 |
申请日期 |
2015.03.31 |
申请人 |
NIPPON MICROMETAL CORPORATION;NIPPON STEEL & SUMIKIN MATERIALS CO., LTD. |
发明人 |
YAMADA, TAKASHI;ODA, DAISO;OISHI, RYO;HAIBARA, TERUO;UNO, TOMOHIRO |
分类号 |
H01L21/60;B21C1/00;C22C5/06;C22C5/08;C22F1/00;C22F1/14 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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地址 |
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