METHOD FOR MANUFACTURE OF A SEMICONDUCTOR WAFER SUITABLE FOR THE MANUFACTURE OF AN SOI SUBSTRATE, AND SOI SUBSTRATE WAFER THUS OBTAINED

摘要

Method for production of a semiconductor wafer suitable for the manufacture of an SOI substrate, comprising the following steps: - production, on the upper face (2) of a semiconductor support (1), of a first layer (4) of polycrystalline semiconductor; then - formation of an interface area (12) on the upper face (7) of said first layer (4), the interface area (12) having a structure distinct from the crystalline structure of said first layer (4); then - production on said interface area (12) of a second layer (14) of polycrystalline semiconductor.