| 摘要 |
The present invention relates to a method for growing a Gallium Nitride and a method for manufacturing a Gallium Nitride substrate using the same.The method of the present invention includes: a first step of forming a first Gallium Nitride layer where liquid Ga droplets are dispersed and distributed on an upper part of a base substrate by supplying a GaCl gas and an NH3 gas, after locating the base substrate in a reaction space and increasing the reaction space to a first growth temperature; a second step of forming a first continuous Gallium Nitride layer on an upper part of the first Gallium Nitride layer, by supplying the GaCl gas and the NH3 gas as increasing the first growth temperature to a second growth temperature; and a third step of forming a second Gallium Nitride layer on an upper part of the first continuous Gallium Nitride layer, by supplying the GaCl gas and the NH3 gas at the second growth temperature. According to the present invention, the method can grow Gallium Nitride by simplifying a process by removing an additional process except the process of growing Gallium Nitride, and can manufacture the Gallium Nitride substrate through the same, and thus can reduce total production costs. |
