| 摘要 |
A method for etching a stack with a hard mask, a ruthenium (Ru) containing layer disposed under the hard mask, and a magnetic tunnel junction (MTJ) disposed under the Ru containing layer. The MTJ stack has a pinned layer. The hard mask is etched through a dry etching. The Ru containing layer is etched by using hypochlorite and/or O_3 system chemical substances. The MTJ stack is etched. The MTJ stack is capped with dielectric materials. The pinned layer is etched after capping the MTJ stack. |
