Semiconductor devices comprising a fin

摘要

A semiconductor device may include a fin disposed over a workpiece. The fin may include: a first semiconductive material disposed over the workpiece; an oxide of the first semiconductive material disposed over the first semiconductive material; a second conductive material disposed over and spaced apart from the oxide of the first semiconductive material; a first insulating material disposed around and lining the second semiconductive material; a conductive material disposed around the first insulating material; and a second insulating material disposed between the oxide of the first semiconductive material and a portion of the conductive material facing the workpiece, the second insulating material further lining sidewalls of the conductive material.

主权项

1. A semiconductor device comprising:
a fin disposed over a workpiece, the fin comprising:
a first semiconductive material disposed over the workpiece;an oxide of the first semiconductive material disposed over the first semiconductive material;a second semiconductive material disposed over the oxide of the first semiconductive material;a conductive material disposed over and around the second semiconductive material, a portion of the conductive material being disposed between the oxide of the first semiconductive material and the second semiconductive material;a first insulating material disposed around the second semiconductive material, a first portion of the first insulating material being disposed between a top surface of the second semiconductive material and the conductive material, a second portion of the first insulating material being disposed between a bottom surface of the second semiconductive material and the conductive material; anda second insulating material disposed around regions of the conductive material, a portion of the second insulating material being disposed between the conductive material and the oxide of the first semiconductive material, wherein the conductive material comprises a gate of a gate-all-around (GAA) fin field effect transistor (FinFET), and wherein the second semiconductive material comprises a channel region of the GAA FinFET.