发明名称 Radio frequency (RF) filter and RF transceiver using bulk acoustic wave resonator (BAWR)
摘要 A filter and a transceiver in a radio frequency (RF) band, using a bulk acoustic wave resonator (BAWR), are provided. The RF filter includes at least one low temperature coefficient of frequency (TCF) BAWR. The RF filter further includes at least one high quality factor (Q) BAWR including a high Q compared to the at least one low TCF BAWR, the at least one low TCF BAWR including a low TCF compared to the at least one high Q BAWR.
申请公布号 US9154110(B2) 申请公布日期 2015.10.06
申请号 US201313747594 申请日期 2013.01.23
申请人 Samsung Electronics Co., Ltd. 发明人 Kim Duck Hwan;Kim Chul Soo;Kim Seong Joong;Song In Sang;Shin Jea Shik
分类号 H01L41/00;H03H9/54;H03H9/02;H03H9/17;H03H9/60 主分类号 H01L41/00
代理机构 NSIP Law 代理人 NSIP Law
主权项 1. A radio frequency (RF) filter using a bulk acoustic wave resonator (BAWR), the RF filter comprising: at least one low temperature coefficient of frequency (TCF) BAWR comprising a first electrode,a first piezoelectric layer disposed on the first electrode,a second electrode disposed on the list piezoelectric layer, anda TCF compensation layer configured to compensate for a TCF of the first electrode, the first piezoelectric layer and the second electrode; and at least one high quality factor (Q) BAWR comprising a third electrode,a second piezoelectric layer disposed on the third electrode, anda fourth electrode disposed on the second piezoelectric layer, wherein the at least one high Q BAWR comprises a high Q compared to the at least one low TCF BAWR and does not include a TCF compensation layer configured to compensate for a TCG of the third electrode, the second piezoelectric layer, and the fourth electrode, and wherein the at least one low TCF BAWR comprises a low TCF compared to the at least one high Q BAWR.
地址 Suwon-si KR