NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE HAVING THE SAME, AND WRITING METHOD AND READING METHOD THEREOF

摘要

A nonvolatile memory device, according to the present invention, performs a read operation from a true cell storing data and complementary cell storing complementary data, thereby maximizing sensing margin. Also, the nonvolatile memory device connects a plurality of true cells/complementary cells to a word line, thereby markedly reducing the size of a memory cell array.